SMB808200
Laser Diode
808 nm 200mW

Infrared Laser Diode
Package: φ 9.0 mm


    It is an Infrared gain-power laser diodes manufactured by MOCVD. They are suitable for medical, communication and several other uses.
 
Electrical and Optical Characteristics at 25°C            Class IIIb

SMB808200 - Package: φ 9.0 mm

Symbol

Min

Typ

Max

Unit

Wavelength

λ

803

808

811

nm

Optical output power

Po

-

200

-

mW

Threshold current

Ith

-

150

200

mA

LD operating current

Iop

-

350

500

mA

LD operating voltage

Vop

-

1.9

3.0

V

Beam divergence

θ||

-

12

17

deg.

Beam divergence

θ

-

28

40

deg.

Monitor current

Im

-

0.3

-

mA

Laser Diode reverse voltage

VR (LD)

-

2

-

V

Photo Diode reverse voltage

VR (PD)

-

15

-

V

Operating temperature

Topr

-

-10~+40

-

°C

Storage temperature

Tstg

-

-40~+85

-

°C

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Our Laser Diodes, Laser Modules and Laser Accessories are designed solely as OEM components for incorporation into the customer's end products. Therefore, the above mentioned products do not comply with the appropriate requirements of FDA 21CFR, section 1040.10 and 1040.11 for complete laser products. If needed, customers should submit their own finished product to FDA for certification for the product as a whole
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