SMB808500
Laser Diode
808 nm 500mW
Infrared Laser Diode
Package: φ 9.0 mm

SMB808500 - Package: φ 9.0 mm

Symbol

Min

Typ

Max

Unit

Wavelength

λ

803

808

811

nm

Optical output power

P_o

-

500

-

mW

Threshold current

I_th

-

180

-

mA

LD operating current

I_op

-

750

1000

mA

LD operating voltage

V_op

-

2.1

3.0

V

Beam divergence

θ||

-

8

17

deg.

Beam divergence

θ┴

-

30

40

deg.

Monitor current

I_m

-

0.8

-

mA

Laser Diode reverse voltage

VR (LD)

-

2

-

V

Photo Diode reverse voltage

VR (PD)

-

15

-

V

Operating temperature

T_opr

-

-10~+40

-

°C

Storage temperature

T_stg

-

-40~+85

-

°C